About IRT Saint Exupéry
The IRT Saint Exupery is an accelerator for science, technological research and transfer to the aeronautic and space industries for the development of innovative solutions that are reliable, robust, certifiable and sustainable.
We offer on our sites in Toulouse, Bordeaux, Sophia Antipolis and Montreal an integrated collaborative environment made up of engineers, researchers, experts and doctoral students from industrial and academic backgrounds for research projects and R&T services backed by technological platforms around of 4 domains:
advanced manufacturing technologies
methods & tools for the development of complex systems
Our developed technologies meet the needs of industry, integrating the results of academic research.
We have four sites: Toulouse, Talence, Sophia-Antipolis & Montreal.
IRT Saint Exupéry is the main tenant of the B612 bulding, Toulouse Aerospace's innovation center, occupying 10,900 m² out of the 24,000 m² available. Located in the Montaudran district, at the heart of a rich and rapidly changing ecosystem, the B612 building shelter the major players in innovation: U-Space, Airbus OneWeb satellites, ANITI, ESSP, Aerospace Valley, and even Capgemini.
3 reasons to join us:
Take part in innovative research projects, at the service of French technological research and for the benefit of industry established on national and European territory.
Live your passion for technology, give yourself the freedom to innovate and develop your pioneering and team spirit!
Evolve in an integrated and multicultural collaborative environment, working alongside collaborators from academic research or industry: researchers, doctoral students, engineers, technicians, etc.
What we offer you:
An advantageous company insurance
A profit-sharing agreement (from July 1)
A dynamic and lively works council offering activities
Join a committed Institute (Gender Equality Plan)
Support for part of your green trips (public transport and bicycles)
A remote working agreement giving you the possibility to telecommute up to 2 days a week
A concierge service offering many services at reduced prices (Toulouse site only)
Visit our technological platforms in Toulouse :
We offer a challenging post-doc in a dynamic and multidisciplinary environment. The post-doc is supported in the frame of the GANRET (Gallium Nitride Reliability for Trasnsport) project, that aims the insertion of GaN based power electronics into severe environmental constrains applications. The project gathers several partners across different fields from space (ADS, Safran Electronics & Defense, TAS) to aeronautic with (Safran Electronics & Defense, Safran Tech and AIRBUS), including automotive with Vitesco Technology.
The industrial needs are complemented by a rich ecosystem of academic laboratories of test and technology investigation expertise and facilities. In particular the project integrates the national best-in-class scientific offer represented by four public laboratories (AMPERE à Lyon, IES à Montpellier, LAAS in Toulouse, SATIE in Paris) and a private academic laboratory (ICAM in Toulouse).
Gallium Nitride (GaN) power devices present higher electron mobility, lower capacitance values and lower on-state resistance than their silicon counterparts, leading to overall performances improvement particularly in higher frequencies and higher efficiency. This technology aims to enable the transition toward power electronics conversion. However, the characterization and fine understanding of the reliability of these components remains one of the last obstacles .
The aim of the post-doc, is to strengthen the knowledge and know-how in characterization methods, understanding f the reliability of new GaN HEMT power switches.
The post-doc will be dedicated to establish and define stable and repeatable test protocols that take into account trapping mechanisms, for measuring the fundamental electrical parameters used as indicators of the GaN power devices health. Indeed, parameters such as for example the threshold voltage and the channel resistance are strongly dependent from the trapping state of the device , , making the measurements unstable and not suitable for health tracking. Therefore, the objective of the work is to put the device in a reproducible state, allowing meaningful comparison of its health state before and after aging characterizations. The established methodology will be demonstrated on reliability tests such as “High Temperature Gate Bias” and “High Temperature Reversed Bias”–...
A deep understanding of the trapping behaviour and its influence on GaN power device electrical characteristics
Establishment of repeatable and reliable test protocols to characterize GaN components coming from different suppliers
Implementation of test plans
Electrical characterization of WBG components
Post-processing of test results and extrapolation of aging laws
Participation in the organization of Workshops
Participation in the redaction of specifications, technical reports and project deliverables
Writing of scientific publications
Thesis in a relevant area of applied physics, or electrical engineering
A solid background in semiconductor physics
Ability to work with experts from a broad range of scientific and technology backgrounds
Applicants may also advantageously have experience in one or more of the following areas:
A first experience in power devices characterization
Fluent spoken and written English